Magnetic coupling in ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices

Investigation of Ferromagnetic Semiconductor Devices for Spintronics

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Interlayer Exchange Coupling in Semiconductor EuS–PbS Ferromagnetic Wedge Multilayers

Antiferromagnetic interlayer coupling between ferromagnetic layers of EuS via nonmagnetic PbS spacer layer was experimentally studied in EuS– PbS wedge multilayers grown on KCl (001) substrates with EuS thickness of 6 nm and PbS thickness varying in the wedges in the range 0.3–6 nm (i.e. n = 1−20 monolayers). Measurements of magnetic hysteresis loops of EuS–PbS multilayers performed in the temp...

A room-temperature magnetic semiconductor from a ferromagnetic metallic glass

Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises for new functionalities and device concepts. So far, the so-called diluted magnetic semiconductors attract many attentions, yet it remains challenging to increase their Curie temperatures above room temperature, particularly those based on III-V semiconductors. ...

Josephson Current in a Ferromagnetic Semiconductor/Semiconductor/Ferromagnetic Semiconductor Junction with Superconducting Contacts

Magnetic proximity effect and interlayer exchange coupling of ferromagnetic/topological insulator/ferromagnetic trilayer

Mingda Li,1,2,* Wenping Cui,3 Jin Yu,1,4 Zuyang Dai,5 Zhe Wang,1 Ferhat Katmis,2,6 Wanlin Guo,4 and Jagadeesh Moodera2,6,† 1Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA 2Fracsis Bitter Magnetic Lab, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, ...